Hello everyone.
I’m Nakamatsu from the Power Device Design Section.

This is a sequel to my last blog that explained the avalanche capability tests for power MOSFETs.

In the previous article, I explained that even if the avalanche energy is the same, the junction temperature T_j of the MOSFETs are different under different test conditions, and thus avalanche capability cannot be simply compared. Now, let’s consider case (3), with L load value L=3 µH and avalanche current I_AS=50 A for the same device as in the last blog.

Hello, everyone.
I’m Zhang from Engineering Department 2.

In this article, I will talk about switching evaluation of power semiconductors such as power devices and power modules.

(Click here for our  “Power Module and Power Device” Evaluation Services)