What is Avalanche Test of Power MOSFETs? (Part 3)

Hello everyone.
I’m Nakamatsu from the Power Device Design Section.

This is a sequel to my last blog that explained the avalanche capability tests for power MOSFETs.

In the previous article, I explained that even if the avalanche energy is the same, the junction temperature Tj of the MOSFETs are different under different test conditions, and thus avalanche capability cannot be simply compared. Now, let’s consider case (3), with L load value L=3 µH and avalanche current IAS=50 A for the same device as in the last blog.

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